onsemi SiC Power Module, 1200 V F1-2PACK NXH010P120MNF1PTG

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Bulk discount available

Subtotal (1 unit)*

R 3 633,79

(exc. VAT)

R 4 178,86

(inc. VAT)

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  • 28 unit(s) ready to ship from another location
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Units
Per unit
1 - 1R 3,633.79
2 - 4R 3,542.95
5 - 9R 3,436.66
10 - 14R 3,299.19
15 +R 3,167.22

*price indicative

Packaging Options:
RS stock no.:
248-5824
Mfr. Part No.:
NXH010P120MNF1PTG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

SiC Power Module

Maximum Drain Source Voltage Vds

1200V

Package Type

F1-2PACK

Mount Type

Through Hole

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET Press-fit pins, Thermal Interface Material


The ON Semiconductor is a power module containing an 10 mohm/1200 V SiC MOSFET half bridge and a thermistor in an F1 package.

10 mohm/1200 V SiC MOSFET half bridge

Options with pre−applied thermal interface material and without pre−applied TIM

Press−fit pins

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