onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247
- RS stock no.:
- 248-5815
- Mfr. Part No.:
- NTH4L060N065SC1
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 2 952,69
(exc. VAT)
R 3 395,58
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 420 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 98.423 | R 2,952.69 |
| 60 - 60 | R 95.962 | R 2,878.86 |
| 90 + | R 93.083 | R 2,792.49 |
*price indicative
- RS stock no.:
- 248-5815
- Mfr. Part No.:
- NTH4L060N065SC1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L
The ON Semiconductor Silicon Carbide (SiC) MOSFET is a N channel MOSFET with 650 V drain to source voltage and 176 W power dissipation, TO247-4L packaging and this device is Halide free and RoHS compliant with exemption 7a, Pb−Free 2LI.
Ultra low gate charge 74 nC
Low capacitance 133 pF
100 percent avalanche tested
Temperature 175°C
RDS(on) 44 mohm
Related links
- onsemi N-Channel MOSFET 650 V, 4-Pin TO-247-4L NTH4L060N065SC1
- onsemi N-Channel MOSFET 650 V, 3-Pin TO-247 NTHL060N065SC1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 3-Pin TO-247 IMW65R027M1HXKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 650 V, 3-Pin TO-247 SPW47N60C3FKSA1
- Vishay Silicon N-Channel MOSFET 650 V, 3-Pin TO-220AB SIHP054N65E-GE3
- Infineon IML SiC N-Channel MOSFET 650 V, 16-Pin PG-HDSOP-16 IMLT65R050M2HXTMA1
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3
- onsemi NVH SiC N-Channel MOSFET 650 V, 4-Pin TO-247-4L NVH4L023N065M3S