STMicroelectronics STL Type N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT STL320N4LF8
- RS stock no.:
- 248-4899
- Mfr. Part No.:
- STL320N4LF8
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 2 units)*
R 107,53
(exc. VAT)
R 123,66
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 448 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 53.765 | R 107.53 |
| 10 - 98 | R 52.42 | R 104.84 |
| 100 - 248 | R 50.845 | R 101.69 |
| 250 - 498 | R 48.81 | R 97.62 |
| 500 + | R 46.86 | R 93.72 |
*price indicative
- RS stock no.:
- 248-4899
- Mfr. Part No.:
- STL320N4LF8
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | STL | |
| Package Type | PowerFLAT | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.9 mm | |
| Length | 6mm | |
| Height | 1mm | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series STL | ||
Package Type PowerFLAT | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.9 mm | ||
Length 6mm | ||
Height 1mm | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel Power MOSFET that utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Used for switching applications
MSL1 grade
175 degree C operating temperature
100 percent avalanche tested
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