STMicroelectronics STL Type N-Channel MOSFET, 55 A, 12 V Enhancement, 8-Pin PowerFLAT STL325N4LF8AG
- RS stock no.:
- 248-4901
- Mfr. Part No.:
- STL325N4LF8AG
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 2 units)*
R 91,25
(exc. VAT)
R 104,938
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,810 unit(s) shipping from 21 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 45.625 | R 91.25 |
| 10 - 98 | R 44.485 | R 88.97 |
| 100 - 248 | R 43.15 | R 86.30 |
| 250 - 498 | R 41.425 | R 82.85 |
| 500 + | R 39.77 | R 79.54 |
*price indicative
- RS stock no.:
- 248-4901
- Mfr. Part No.:
- STL325N4LF8AG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | STL | |
| Package Type | PowerFLAT | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 188W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Length | 6mm | |
| Standards/Approvals | UL | |
| Width | 4.9 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series STL | ||
Package Type PowerFLAT | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 188W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Length 6mm | ||
Standards/Approvals UL | ||
Width 4.9 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel Power MOSFET that utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on state resistance while reducing internal capacitances and gate charge for faster and more efficient switching.
Used for switching applications
MSL1 grade
AEC-Q101 qualified
175 degree C operating temperature
100 percent avalanche tested
Wettable flank package
Related links
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