STMicroelectronics Stl N channel-Channel Power MOSFET, 144 A, 40 V Enhancement, 8-Pin PowerFLAT STL140N4LF8
- RS stock no.:
- 719-478
- Mfr. Part No.:
- STL140N4LF8
- Manufacturer:
- STMicroelectronics
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R 12,82
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R 14,74
(inc. VAT)
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- 300 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 24 | R 12.82 |
| 25 - 99 | R 12.50 |
| 100 - 499 | R 12.13 |
| 500 + | R 11.64 |
*price indicative
- RS stock no.:
- 719-478
- Mfr. Part No.:
- STL140N4LF8
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 144A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerFLAT | |
| Series | Stl | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 94W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5mm | |
| Length | 6.1mm | |
| Height | 1mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 144A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerFLAT | ||
Series Stl | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 94W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 5mm | ||
Length 6.1mm | ||
Height 1mm | ||
The STMicroelectronics 40 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for Faster and more efficient switching.
MSL1 grade
175 °C maximum operating junction temperature
100% avalanche tested
Low gate charge Qg
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