Vishay SIJ Type N-Channel MOSFET, 59 A, 100 V Enhancement, 7-Pin SO-8L SIJ4106DP-T1-GE3

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Subtotal (1 pack of 4 units)*

R 152,352

(exc. VAT)

R 175,204

(inc. VAT)

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Units
Per unit
Per Pack*
4 - 56R 38.088R 152.35
60 - 96R 37.135R 148.54
100 - 236R 36.02R 144.08
240 - 996R 34.58R 138.32
1000 +R 33.198R 132.79

*price indicative

Packaging Options:
RS stock no.:
279-9931
Mfr. Part No.:
SIJ4106DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8L

Series

SIJ

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.0083Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

69.4W

Maximum Operating Temperature

150°C

Length

5.13mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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