Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD30N12S3L31ATMA1

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Subtotal (1 pack of 5 units)*

R 115,20

(exc. VAT)

R 132,50

(inc. VAT)

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  • Plus 5 unit(s) shipping from 29 December 2025
  • Plus 1,695 unit(s) shipping from 05 January 2026
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Units
Per unit
Per Pack*
5 - 5R 23.04R 115.20
10 - 95R 22.464R 112.32
100 - 245R 21.79R 108.95
250 - 495R 20.918R 104.59
500 +R 20.082R 100.41

*price indicative

Packaging Options:
RS stock no.:
244-1592
Mfr. Part No.:
IPD30N12S3L31ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

N

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM power MOSFET for automotive applications is a Green product RoHS compliant and is Automotive AEC Q101 qualified.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

100% Avalanche tested

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