Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1

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R 62,87

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R 72,30

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1 - 9R 62.87
10 - 99R 61.30
100 - 249R 59.46
250 - 499R 57.08
500 +R 54.80

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Packaging Options:
RS stock no.:
244-0946
Mfr. Part No.:
IPD80R280P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

N

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. Overall, it helps customers save BOM cost and reduce assembly effort.

Best-in-class DPAK RDS(on) of 280mΩ

Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

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