Infineon IPD Type P-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

R 26 747,50

(exc. VAT)

R 30 760,00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500R 10.699R 26,747.50
5000 - 5000R 10.432R 26,080.00
7500 +R 10.119R 25,297.50

*price indicative

RS stock no.:
244-0879
Mfr. Part No.:
IPD650P06NMATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.

P-Channel

Very low on-resistance RDS(on)

100% avalanche tested

Normal Level

Enhancement mode

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