Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 3-Pin TO-263 IPB60R045P7ATMA1

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R 106,13

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R 122,05

(inc. VAT)

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1 - 9R 106.13
10 - 99R 103.48
100 - 249R 100.38
250 - 499R 96.36
500 +R 92.51

*price indicative

Packaging Options:
RS stock no.:
242-5828
Mfr. Part No.:
IPB60R045P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

273A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

N

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon super junction MOSFET is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Integrated gate resistor RG

Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness

Significant reduction of switching and conduction losses

Excellent ESD robustness > 2kV (HBM) for all products

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