Infineon iPB N-Channel MOSFET, 273 A, 100 V P, 3-Pin TO-263 IPB020N08N5ATMA1
- RS stock no.:
- 243-9266
- Mfr. Part No.:
- IPB020N08N5ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
R 94,66
(exc. VAT)
R 108,86
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 1 - 9 | R 94.66 |
| 10 - 99 | R 92.29 |
| 100 - 249 | R 89.52 |
| 250 - 499 | R 85.94 |
| 500 + | R 82.50 |
*price indicative
- RS stock no.:
- 243-9266
- Mfr. Part No.:
- IPB020N08N5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | P | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode P | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon N-channel power MOSFET is an ideal for high frequency switching. It has an excellent gate charge product (FOM). It typically provided in D2PAK package system. The drain current and drain-source voltage of power MOSFET is 173 A and 80 V respec
300 W power dissipation
Surface mount
Optimized for synchronous rectification
Output capacitance reduction of up to 44 %
Related links
- Infineon iPB N-Channel MOSFET 100 V P, 3-Pin TO-263
- Infineon iPB N-Channel MOSFET 100 V N, 3-Pin TO-263
- Infineon iPB N-Channel MOSFET 100 V N, 7-Pin TO-263
- Infineon iPB N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon iPB N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB048N15N5LFATMA1
- Infineon iPB N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB60R045P7ATMA1
- Infineon iPB N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB110N20N3LFATMA1
- Infineon iPB N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1