Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN4R8-100YSEX
- RS stock no.:
- 240-1977
- Mfr. Part No.:
- PSMN4R8-100YSEX
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 118,17
(exc. VAT)
R 135,896
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 59.085 | R 118.17 |
| 50 - 98 | R 57.61 | R 115.22 |
| 100 - 248 | R 55.88 | R 111.76 |
| 250 - 498 | R 53.645 | R 107.29 |
| 500 + | R 51.50 | R 103.00 |
*price indicative
- RS stock no.:
- 240-1977
- Mfr. Part No.:
- PSMN4R8-100YSEX
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK56E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Maximum Power Dissipation Pd | 12.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK56E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Maximum Power Dissipation Pd 12.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia N-channel enhancement mode MOSFET is in a LFPAK56E package.
Fully optimized Safe Operating Area (SOA) for superior linear mode operation
Low RDSon for low I²R conduction losses
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