Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN3R5-80YSFX
- RS stock no.:
- 243-4873
- Mfr. Part No.:
- PSMN3R5-80YSFX
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 345,25
(exc. VAT)
R 397,05
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,485 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 69.05 | R 345.25 |
| 50 - 95 | R 67.324 | R 336.62 |
| 100 - 245 | R 65.304 | R 326.52 |
| 250 - 495 | R 62.692 | R 313.46 |
| 500 + | R 60.184 | R 300.92 |
*price indicative
- RS stock no.:
- 243-4873
- Mfr. Part No.:
- PSMN3R5-80YSFX
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK56E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK56E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia N-channel MOSFET in LFPAK56E package is standard level gate drive qualified to 175 °C and recommended for industrial and consumer applications.
Low Qrr for higher efficiency and lower spiking
Low QG x RDSon FOM for high efficiency switching applications
Strong avalanche energy rating (Eas)
Avalanche rated and 100% tested
Synchronous rectifier in AC-DC and DC-DC
Primary side switch in DC-DC
BLDC motor control
USB-PD adapters
Full-bridge and half-bridge applications
Flyback and resonant topologies
Related links
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