Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E PSMN1R5-50YLHX
- RS stock no.:
- 240-1973
- Mfr. Part No.:
- PSMN1R5-50YLHX
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 151,26
(exc. VAT)
R 173,94
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,480 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 75.63 | R 151.26 |
| 50 - 98 | R 73.74 | R 147.48 |
| 100 - 248 | R 71.53 | R 143.06 |
| 250 - 498 | R 68.67 | R 137.34 |
| 500 + | R 65.925 | R 131.85 |
*price indicative
- RS stock no.:
- 240-1973
- Mfr. Part No.:
- PSMN1R5-50YLHX
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | LFPAK56E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 12.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type LFPAK56E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 12.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia MOSFET is in LFPAK56E package with 200 Amp continuous current, logic level gate drive and N-channel enhancement mode. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode per
LFPAK56E low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection
Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating
Qualified to 175 °C
Avalanche rated, 100% tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
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