Vishay N-Channel MOSFET, 445 A, 30 V Depletion, 4-Pin PowerPAK (8x8L) SQJQ112E-T1_GE3

Image representative of range

Bulk discount available
View bulk pricing options

Subtotal (1 pack of 2 units)*

R 177,66

(exc. VAT)

R 204,30

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Pack*
2 - 48R 88.83R 177.66
50 - 98R 86.61R 173.22
100 - 248R 84.01R 168.02
250 - 998R 80.65R 161.30
1000 +R 77.425R 154.85

*price indicative

Packaging Options:
RS stock no.:
239-8676
Mfr. Part No.:
SQJQ112E-T1_GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

445A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK (8x8L)

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.00253Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

43nC

Maximum Power Dissipation Pd

255W

Maximum Operating Temperature

125°C

Standards/Approvals

No

Width

4.9mm

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is automotive Gen IV power N-Channel MOSFET which operates at 100 V and 175 °C temperature. This MOSFET used for high power density.

AEC-Q101 qualified

UIS tested

Thin package

Related links