Vishay Type N-Channel MOSFET, 445 A, 30 V Depletion, 4-Pin PowerPAK (8x8L) SQJQ112E-T1_GE3

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Subtotal (1 pack of 2 units)*

R 157,37

(exc. VAT)

R 180,976

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 78.685R 157.37
50 - 98R 76.72R 153.44
100 - 248R 74.42R 148.84
250 - 998R 71.445R 142.89
1000 +R 68.585R 137.17

*price indicative

Packaging Options:
RS stock no.:
239-8676
Mfr. Part No.:
SQJQ112E-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

445A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK (8x8L)

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.00253Ω

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

255W

Typical Gate Charge Qg @ Vgs

43nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

125°C

Length

6.15mm

Width

4.9 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is automotive Gen IV power N-Channel MOSFET which operates at 100 V and 175 °C temperature. This MOSFET used for high power density.

AEC-Q101 qualified

UIS tested

Thin package

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