Vishay Type N-Channel MOSFET, 118 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L)

Image representative of range

Bulk discount available

Subtotal (1 reel of 3000 units)*

R 22 095,00

(exc. VAT)

R 25 410,00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 3,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 - 6000R 7.365R 22,095.00
9000 +R 7.181R 21,543.00

*price indicative

RS stock no.:
252-0306
Mfr. Part No.:
SQJ184EP-T1_GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

118A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK (8x8L)

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.04mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

43nC

Maximum Power Dissipation Pd

214W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

4.9 mm

Standards/Approvals

No

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.9 mm height

Related links