Vishay Type N-Channel MOSFET, 415 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3

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Subtotal (1 pack of 2 units)*

R 65,27

(exc. VAT)

R 75,06

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 32.635R 65.27
50 - 98R 31.82R 63.64
100 - 248R 30.865R 61.73
250 - 998R 29.63R 59.26
1000 +R 28.445R 56.89

*price indicative

Packaging Options:
RS stock no.:
239-8615
Mfr. Part No.:
SiDR220EP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

415A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00082Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

120W

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Operating Temperature

125°C

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 25 V and 175 °C temperature. This MOSFET used for high power density, synchronous buck converter and load switching.

Top side cooling feature provides additional venue for thermal transfer

Low power loss

UIS tested

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