Vishay Type N-Channel MOSFET, 415 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3

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R 61,60

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R 70,84

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 30.80R 61.60
50 - 98R 30.03R 60.06
100 - 248R 29.13R 58.26
250 - 998R 27.965R 55.93
1000 +R 26.845R 53.69

*price indicative

Packaging Options:
RS stock no.:
239-8615
Mfr. Part No.:
SiDR220EP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

415A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00082Ω

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Power Dissipation Pd

120W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

125°C

Length

6.15mm

Width

5.15 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 25 V and 175 °C temperature. This MOSFET used for high power density, synchronous buck converter and load switching.

Top side cooling feature provides additional venue for thermal transfer

Low power loss

UIS tested

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