Vishay Type N-Channel MOSFET, 90.5 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SIDR104AEP-T1-RE3

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Subtotal (1 pack of 2 units)*

R 134,66

(exc. VAT)

R 154,86

(inc. VAT)

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  • 6,044 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 48R 67.33R 134.66
50 - 98R 65.645R 131.29
100 - 248R 63.675R 127.35
250 - 998R 61.13R 122.26
1000 +R 58.685R 117.37

*price indicative

Packaging Options:
RS stock no.:
239-8613
Mfr. Part No.:
SIDR104AEP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

90.5A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Depletion

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

120W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Operating Temperature

125°C

Standards/Approvals

No

Width

5.15 mm

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 100 V and 175°C temperature. This MOSFET used for power supply, motor drive control and synchronous rectification.

Very low resistance

UIS tested

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