Vishay Type N-Channel MOSFET, 218 A, 100 V Depletion, 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3

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Subtotal (1 pack of 2 units)*

R 163,63

(exc. VAT)

R 188,174

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 81.815R 163.63
50 - 98R 79.77R 159.54
100 - 248R 77.375R 154.75
250 - 998R 74.28R 148.56
1000 +R 71.31R 142.62

*price indicative

Packaging Options:
RS stock no.:
239-8617
Mfr. Part No.:
SiDR626LEP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

218A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

120W

Typical Gate Charge Qg @ Vgs

46.1nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

125°C

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for solar micro inverter, motor drive switch and synchronous rectification.

Top side cooling feature provides additional venue for thermal transfer

Very low resistance

UIS tested

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