Infineon SIPMOS® Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1

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Subtotal (1 pack of 10 units)*

R 35,13

(exc. VAT)

R 40,40

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 3.513R 35.13
20 - 90R 3.425R 34.25
100 - 240R 3.322R 33.22
250 - 490R 3.189R 31.89
500 +R 3.061R 30.61

*price indicative

Packaging Options:
RS stock no.:
236-4398
Mfr. Part No.:
BSS126IXTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21mA

Maximum Drain Source Voltage Vds

600V

Series

SIPMOS®

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700Ω

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

1.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

0.5W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

1.4 mm

Height

1.1mm

Length

3mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V N-channel small signal depletion-mode MOSFET is Pb-free lead plating, RoHS compliant and halogen-free according to IEC61249-2-21. Fully qualified according to JEDEC for industrial applications. It has Industry standard qualification level.

High system reliability

Environmentally friendly

PCB space and cost saving

dv/dt rated

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