Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1

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Subtotal (1 pack of 10 units)*

R 37,69

(exc. VAT)

R 43,34

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 10R 3.769R 37.69
20 - 90R 3.675R 36.75
100 - 240R 3.565R 35.65
250 - 490R 3.422R 34.22
500 +R 3.285R 32.85

*price indicative

Packaging Options:
RS stock no.:
236-4398
Mfr. Part No.:
BSS126IXTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21mA

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-23

Series

SIPMOS®

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700Ω

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

1.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

0.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

3mm

Height

1.1mm

Width

1.4mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V N-channel small signal depletion-mode MOSFET is Pb-free lead plating, RoHS compliant and halogen-free according to IEC61249-2-21. Fully qualified according to JEDEC for industrial applications. It has Industry standard qualification level.

High system reliability

Environmentally friendly

PCB space and cost saving

dv/dt rated

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