Infineon SIPMOS® Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
- RS stock no.:
- 236-4397
- Mfr. Part No.:
- BSS126IXTSA1
- Manufacturer:
- Infineon
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Subtotal (1 reel of 3000 units)*
R 5 046,00
(exc. VAT)
R 5 802,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 1.682 | R 5,046.00 |
| 6000 - 6000 | R 1.64 | R 4,920.00 |
| 9000 + | R 1.591 | R 4,773.00 |
*price indicative
- RS stock no.:
- 236-4397
- Mfr. Part No.:
- BSS126IXTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS® | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1.1mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS® | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1.1mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
The Infineon 600V N-channel small signal depletion-mode MOSFET is Pb-free lead plating, RoHS compliant and halogen-free according to IEC61249-2-21. Fully qualified according to JEDEC for industrial applications. It has Industry standard qualification level.
High system reliability
Environmentally friendly
PCB space and cost saving
dv/dt rated
Related links
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