Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1
- RS stock no.:
- 236-3670
- Mfr. Part No.:
- IPT030N12N3GATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 204,06
(exc. VAT)
R 234,66
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 1,872 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 102.03 | R 204.06 |
| 10 - 98 | R 99.48 | R 198.96 |
| 100 - 248 | R 96.495 | R 192.99 |
| 250 - 498 | R 92.635 | R 185.27 |
| 500 + | R 88.93 | R 177.86 |
*price indicative
- RS stock no.:
- 236-3670
- Mfr. Part No.:
- IPT030N12N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 237A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | HSOF-8 | |
| Series | OptiMOS™ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.58 mm | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 237A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type HSOF-8 | ||
Series OptiMOS™ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Width 10.58 mm | ||
Length 10.1mm | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET is the Ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.
High power density and improved thermal management
Less board space needed
High system efficiency and less paralleling required
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