Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1
- RS stock no.:
- 236-3669
- Mfr. Part No.:
- IPT030N12N3GATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 2000 units)*
R 97 080,00
(exc. VAT)
R 111 640,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | R 48.54 | R 97,080.00 |
| 4000 - 4000 | R 47.327 | R 94,654.00 |
| 6000 + | R 45.907 | R 91,814.00 |
*price indicative
- RS stock no.:
- 236-3669
- Mfr. Part No.:
- IPT030N12N3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 237A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS™ | |
| Package Type | HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Width | 10.58 mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 237A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS™ | ||
Package Type HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Width 10.58 mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET is the Ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.
High power density and improved thermal management
Less board space needed
High system efficiency and less paralleling required
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