Toshiba Type N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R,LF(T
- RS stock no.:
- 236-3578
- Mfr. Part No.:
- SSM3K339R,LF(T
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
Subtotal (1 pack of 100 units)*
R 91,10
(exc. VAT)
R 104,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 17,900 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | R 0.911 | R 91.10 |
| 200 - 200 | R 0.888 | R 88.80 |
| 300 - 400 | R 0.861 | R 86.10 |
| 500 - 900 | R 0.827 | R 82.70 |
| 1000 + | R 0.794 | R 79.40 |
*price indicative
- RS stock no.:
- 236-3578
- Mfr. Part No.:
- SSM3K339R,LF(T
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 220mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.85V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.4mm | |
| Width | 2.9 mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 220mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.85V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.4mm | ||
Width 2.9 mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
Related links
- Toshiba Type N-Channel MOSFET 40 V, 3-Pin SOT-23
- Toshiba Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SSM3K339R
- Toshiba Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23
- Toshiba Type N-Channel MOSFET 30 VLF(T
- Toshiba Type N-Channel MOSFET 60 VLF(T
- Toshiba Type P-Channel MOSFET 60 VLF(T
- Toshiba Type N-Channel MOSFET 60 VLF(T
- Toshiba Type N-Channel MOSFET 30 V EnhancementLF(T