Toshiba Type N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 SSM3K329R,LF(T

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Subtotal (1 pack of 50 units)*

R 169,10

(exc. VAT)

R 194,45

(inc. VAT)

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In Stock
  • Plus 2,450 unit(s) shipping from 29 December 2025
  • Plus 14,000 unit(s) shipping from 05 January 2026
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Units
Per unit
Per Pack*
50 - 50R 3.382R 169.10
100 - 200R 3.297R 164.85
250 - 450R 3.198R 159.90
500 - 950R 3.07R 153.50
1000 +R 2.947R 147.35

*price indicative

Packaging Options:
RS stock no.:
236-3575
Mfr. Part No.:
SSM3K329R,LF(T
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

289mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-0.9V

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

2.9 mm

Length

2.4mm

Height

0.8mm

Automotive Standard

No

The Toshiba field effect transistor MADE up of the silicon material and having N channel MOS type. It is mainly used in power management switching and high speed switching applications.

Storage temperature range −55 to 150 °C

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