Toshiba Type N-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-23 SSM3K341R,LF(T
- RS stock no.:
- 236-3580
- Mfr. Part No.:
- SSM3K341R,LF(T
- Manufacturer:
- Toshiba
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 186,80
(exc. VAT)
R 214,825
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.472 | R 186.80 |
| 50 - 75 | R 7.285 | R 182.13 |
| 100 - 225 | R 7.067 | R 176.68 |
| 250 - 975 | R 6.784 | R 169.60 |
| 1000 + | R 6.513 | R 162.83 |
*price indicative
- RS stock no.:
- 236-3580
- Mfr. Part No.:
- SSM3K341R,LF(T
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 43mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.9V | |
| Maximum Power Dissipation Pd | 2.4W | |
| Typical Gate Charge Qg @ Vgs | 9.3nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 2.4mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 43mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.9V | ||
Maximum Power Dissipation Pd 2.4W | ||
Typical Gate Charge Qg @ Vgs 9.3nC | ||
Maximum Operating Temperature 175°C | ||
Length 2.4mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
Related links
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