onsemi NTH Type N-Channel MOSFET, 68 A, 1200 V N, 4-Pin TO-247 NTH4L022N120M3S
- RS stock no.:
- 233-6854
- Mfr. Part No.:
- NTH4L022N120M3S
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
R 256,96
(exc. VAT)
R 295,50
(inc. VAT)
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In Stock
- 258 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | R 256.96 |
| 10 - 49 | R 250.54 |
| 50 - 99 | R 243.02 |
| 100 - 199 | R 233.30 |
| 200 + | R 223.97 |
*price indicative
- RS stock no.:
- 233-6854
- Mfr. Part No.:
- NTH4L022N120M3S
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -0.45 V | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 325W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Height | 41.36mm | |
| Length | 15.8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -0.45 V | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 325W | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Height 41.36mm | ||
Length 15.8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
The ON Semiconductor NTH4L022N120M3S is SiC power, single N-Channel MOSFET. It is available in a TO247-4L package. With Drain to Source voltage of 1200 V and continuous drain current of 68 A, the NTH4L022N120M3S is used in applications like Solar Inverters, Electric Vehicle Charging Stations, UPS (Uninterruptible Power Supplies), Energy Storage Systems, SMPS (Switch Mode Power Supplies).
The typical RDS(on) for this device is 22 mꭥ with VGS of 18 V
The device offers low switching losses
It is 100% avalanche tested
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