onsemi NTH Type N-Channel MOSFET, 50 A, 650 V N, 4-Pin TO-247-4L NTH4L032N065M3S
- RS stock no.:
- 327-805
- Mfr. Part No.:
- NTH4L032N065M3S
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 138,37
(exc. VAT)
R 159,13
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 435 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 138.37 |
| 10 - 99 | R 134.91 |
| 100 - 499 | R 130.86 |
| 500 - 999 | R 125.63 |
| 1000 + | R 120.60 |
*price indicative
- RS stock no.:
- 327-805
- Mfr. Part No.:
- NTH4L032N065M3S
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4L | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4L | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Silicon Carbide (SiC) MOSFET, EliteSiC, is a 650 V, 32 mΩ device in the M3S TO247-4L package. It features ultra-low gate charge (QG(tot) = 55 nC) and high-speed switching with low capacitance (Coss = 114 pF). The device is 100% avalanche tested and is halide-free and RoHS compliant with exemption 7a. It is also Pb-free on the second-level interconnection, making it suitable for demanding power electronics applications.
High efficiency and reduced switching losses
Robust and reliable operation in harsh environments
Ideal for automotive industrial and renewable energy applications
Related links
- onsemi NTH SiC N-Channel MOSFET 650 V, 3-Pin TO-247-4L NTHL032N065M3S
- onsemi NTH SiC N-Channel MOSFET 650 V, 4-Pin TO-247-4L NTH4L023N065M3S
- onsemi NTH SiC N-Channel MOSFET 750 V, 7-Pin TO-247-4L NTH4L018N075SC1
- onsemi NTH SiC N-Channel MOSFET 650 V, 3-Pin TO-247-3L NTHL023N065M3S
- onsemi NTH SiC N-Channel MOSFET 1200 V, 4-Pin TO247-4L NTH4L013N120M3S
- onsemi NTH SiC N-Channel MOSFET Transistor 1200 V, 4-Pin TO-247-4 NTH4L080N120SC1
- onsemi NTH SiC N-Channel MOSFET Transistor 1200 V, 3-Pin TO-247 NTHL160N120SC1
- onsemi NTH SiC N-Channel MOSFET Transistor 1200 V, 4-Pin TO-247-4 NTH4L040N120SC1