Infineon OptiMOS 5 Type N-Channel MOSFET, 37 A, 100 V, 8-Pin SO-8 ISC0803NLSATMA1

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Subtotal (1 pack of 5 units)*

R 145,97

(exc. VAT)

R 167,865

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 29.194R 145.97
10 - 95R 28.464R 142.32
100 - 245R 27.61R 138.05
250 - 495R 26.506R 132.53
500 +R 25.446R 127.23

*price indicative

Packaging Options:
RS stock no.:
232-6760
Mfr. Part No.:
ISC0803NLSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

37A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21.9mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

43W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Operating Temperature

175°C

Height

5.35mm

Width

1.2 mm

Length

6.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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