Infineon OptiMOS 5 Type N-Channel MOSFET, 64 A, 80 V, 8-Pin PQFN ISZ0602NLSATMA1

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Subtotal (1 pack of 5 units)*

R 145,56

(exc. VAT)

R 167,395

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 29.112R 145.56
10 - 95R 28.384R 141.92
100 - 245R 27.532R 137.66
250 - 495R 26.43R 132.15
500 +R 25.372R 126.86

*price indicative

Packaging Options:
RS stock no.:
232-6769
Mfr. Part No.:
ISZ0602NLSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

80V

Package Type

PQFN

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.9mΩ

Maximum Power Dissipation Pd

60W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

29nC

Maximum Operating Temperature

175°C

Height

3.4mm

Standards/Approvals

No

Length

3.4mm

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 80 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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