STMicroelectronics Single RF3L Type N-Channel MOSFET, 90 V Enhancement, 5-Pin LBB RF3L05250CB4
- RS stock no.:
- 230-0090
- Mfr. Part No.:
- RF3L05250CB4
- Manufacturer:
- STMicroelectronics
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Subtotal (1 unit)*
R 3 424,00
(exc. VAT)
R 3 937,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 20 unit(s) shipping from 11 May 2026
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Units | Per unit |
|---|---|
| 1 - 9 | R 3,424.00 |
| 10 - 99 | R 3,338.40 |
| 100 - 249 | R 3,238.25 |
| 250 - 499 | R 3,108.72 |
| 500 + | R 2,984.37 |
*price indicative
- RS stock no.:
- 230-0090
- Mfr. Part No.:
- RF3L05250CB4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 90V | |
| Package Type | LBB | |
| Series | RF3L | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Channel Mode | Enhancement | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 200°C | |
| Height | 4.85mm | |
| Standards/Approvals | RoHS | |
| Length | 28.95mm | |
| Automotive Standard | No | |
| Typical Power Gain | 18dB | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 90V | ||
Package Type LBB | ||
Series RF3L | ||
Mount Type Surface | ||
Pin Count 5 | ||
Channel Mode Enhancement | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 200°C | ||
Height 4.85mm | ||
Standards/Approvals RoHS | ||
Length 28.95mm | ||
Automotive Standard No | ||
Typical Power Gain 18dB | ||
The STMicroelectronics RF3L05250CB4 is a 250 W 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB/B and C for all typical modulation formats.
High efficiency and linear gain operations
Integrated ESD protection
Large positive and negative gate/source voltage range for improved class C operation
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