Name: Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
Brand: Infineon
SKU: 201-2810
Price: 5441.41 ZAR
Availability: Discontinued

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	200 A
	Maximum Drain Source Voltage	1200 V
	Package Type	AG-EASY2B
	Series	CoolSiC
	Mounting Type	Screw Mount
	Maximum Drain Source Resistance	0.00825 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5.55V
	Transistor Material	SiC
	Number of Elements per Chip	2

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 200 A
	Maximum Drain Source Voltage 1200 V
	Package Type AG-EASY2B
	Series CoolSiC
	Mounting Type Screw Mount
	Maximum Drain Source Resistance 0.00825 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5.55V
	Transistor Material SiC
	Number of Elements per Chip 2

Datasheet - FF6MR12W2M1B11BOMA1

The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.

High current density
Low inductive design
Low switching losses
RoHS-compliant modules

Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1

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