onsemi NTMF Type N-Channel MOSFET, 79 A, 120 V P, 8-Pin SO-8 NTMFS008N12MCT1G
- RS stock no.:
- 229-6467
- Mfr. Part No.:
- NTMFS008N12MCT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 228,02
(exc. VAT)
R 262,225
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 45.604 | R 228.02 |
| 10 - 95 | R 44.464 | R 222.32 |
| 100 - 245 | R 43.13 | R 215.65 |
| 250 - 495 | R 41.404 | R 207.02 |
| 500 + | R 39.748 | R 198.74 |
*price indicative
- RS stock no.:
- 229-6467
- Mfr. Part No.:
- NTMFS008N12MCT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | NTMF | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | P | |
| Maximum Power Dissipation Pd | 102W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.3mm | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series NTMF | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode P | ||
Maximum Power Dissipation Pd 102W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.3mm | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
The ON Semiconductor N-channel power MOSFET flat lead package designed for compact and efficient designs and including high thermal performance. It is used switching power supplies, power switches, battery management and protection.
Minimize conduction losses
Minimize driver losses
RoHS compliant
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