Infineon Dual N IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO

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Subtotal (1 reel of 5000 units)*

R 30 175,00

(exc. VAT)

R 34 700,00

(inc. VAT)

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In Stock
  • Plus 5,000 unit(s) shipping from 12 February 2026
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Units
Per unit
Per Reel*
5000 - 5000R 6.035R 30,175.00
10000 - 10000R 5.884R 29,420.00
15000 +R 5.707R 28,535.00

*price indicative

RS stock no.:
229-1842
Mfr. Part No.:
IPG20N04S412AATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Series

IPG

Package Type

SuperSO

Pin Count

8

Maximum Drain Source Resistance Rds

12.19mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

41W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Transistor Configuration

Dual N

Standards/Approvals

AEC Q101, RoHS

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.

It is RoHS compliant and AEC Q101 qualified

It has 175°C operating temperature

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