Infineon Dual IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO IPG20N04S4L11AATMA1

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Subtotal (1 pack of 15 units)*

R 272,175

(exc. VAT)

R 313,005

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 18.145R 272.18
30 - 75R 17.692R 265.38
90 - 225R 17.161R 257.42
240 - 465R 16.475R 247.13
480 +R 15.816R 237.24

*price indicative

Packaging Options:
RS stock no.:
229-1845
Mfr. Part No.:
IPG20N04S4L11AATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Package Type

SuperSO

Series

IPG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

41W

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Standards/Approvals

AEC-Q101

Length

5.15mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon dual n channel logic level MOSFET is feasible for automatic optical inspection. It has 175°C operating temperature and 100 percent avalanche tested.

It is RoHS compliant and AEC Q101 qualified

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