Infineon Dual OptiMOS-T2 2 N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S436AATMA1
- RS stock no.:
- 218-3060
- Mfr. Part No.:
- IPG20N10S436AATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 232,63
(exc. VAT)
R 267,52
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- 4,680 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 23.263 | R 232.63 |
| 20 - 90 | R 22.681 | R 226.81 |
| 100 - 240 | R 22.001 | R 220.01 |
| 250 - 490 | R 21.121 | R 211.21 |
| 500 + | R 20.276 | R 202.76 |
*price indicative
- RS stock no.:
- 218-3060
- Mfr. Part No.:
- IPG20N10S436AATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Maximum Power Dissipation Pd | 43W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC Q101, RoHS | |
| Width | 5.9mm | |
| Length | 5.15mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Maximum Power Dissipation Pd 43W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC Q101, RoHS | ||
Width 5.9mm | ||
Length 5.15mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 series dual N- channel automotive MOSFET. It is feasible for automatic optical inspection (AOI).
Dual N-channel - Enhancement mode
100% Avalanche tested
175°C operating temperature
Related links
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