Vishay E Type N-Channel MOSFET, 62 A, 700 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 228-2978
- Mfr. Part No.:
- SQW61N65EF-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 3 873,75
(exc. VAT)
R 4 454,82
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 30 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | R 129.125 | R 3,873.75 |
| 120 - 450 | R 125.897 | R 3,776.91 |
| 480 - 930 | R 122.12 | R 3,663.60 |
| 960 + | R 117.235 | R 3,517.05 |
*price indicative
- RS stock no.:
- 228-2978
- Mfr. Part No.:
- SQW61N65EF-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 625W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 229nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 625W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 229nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive E Series Power MOSFET reduced switching and conduction losses.
Fast body diode MOSFET using Automotive
Grade E series technology
Reduced trr, Qrr, and IRRM
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Low switching losses due to reduced Qrr
175 °C operating temperature
AEC-Q101 qualified
Ultra low
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