Vishay E Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 228-2853
- Mfr. Part No.:
- SiHF080N60E-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 1 956,35
(exc. VAT)
R 2 249,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 900 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 39.127 | R 1,956.35 |
| 100 - 450 | R 38.148 | R 1,907.40 |
| 500 - 950 | R 37.004 | R 1,850.20 |
| 1000 - 1950 | R 35.524 | R 1,776.20 |
| 2000 + | R 34.103 | R 1,705.15 |
*price indicative
- RS stock no.:
- 228-2853
- Mfr. Part No.:
- SiHF080N60E-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
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