Vishay E Type N-Channel MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

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Subtotal (1 pack of 10 units)*

R 181,46

(exc. VAT)

R 208,68

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 18.146R 181.46
50 - 90R 17.692R 176.92
100 - 240R 17.161R 171.61
250 - 990R 16.475R 164.75
1000 +R 15.816R 158.16

*price indicative

Packaging Options:
RS stock no.:
228-2852
Mfr. Part No.:
SiHD5N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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