Vishay E Type N-Channel MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3

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Subtotal (1 pack of 5 units)*

R 215,90

(exc. VAT)

R 248,30

(inc. VAT)

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  • 1,995 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45R 43.18R 215.90
50 - 95R 42.10R 210.50
100 - 245R 40.838R 204.19
250 - 995R 39.204R 196.02
1000 +R 37.636R 188.18

*price indicative

Packaging Options:
RS stock no.:
228-2849
Mfr. Part No.:
SIHD11N80AE-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

78W

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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