Vishay E Type N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3

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Subtotal (1 pack of 5 units)*

R 96,28

(exc. VAT)

R 110,72

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 19.256R 96.28
10 - 95R 18.774R 93.87
100 - 495R 18.21R 91.05
500 - 995R 17.482R 87.41
1000 +R 16.782R 83.91

*price indicative

Packaging Options:
RS stock no.:
210-4979
Mfr. Part No.:
SIHD11N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

391mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

78W

Maximum Operating Temperature

150°C

Width

6.4 mm

Height

2.2mm

Length

9.4mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has DPAK (TO-252) package type with single configuration.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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