Vishay E Type N-Channel MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3

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Subtotal (1 pack of 2 units)*

R 231,31

(exc. VAT)

R 266,006

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 115.655R 231.31
10 - 48R 112.765R 225.53
50 - 98R 109.38R 218.76
100 - 248R 105.005R 210.01
250 +R 100.805R 201.61

*price indicative

Packaging Options:
RS stock no.:
228-2842
Mfr. Part No.:
SIHB120N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

30nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

179W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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