Vishay E Type N-Channel MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3

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Subtotal (1 pack of 2 units)*

R 188,90

(exc. VAT)

R 217,24

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 48R 94.45R 188.90
50 - 98R 92.09R 184.18
100 - 248R 89.325R 178.65
250 - 998R 85.75R 171.50
1000 +R 82.32R 164.64

*price indicative

Packaging Options:
RS stock no.:
228-2873
Mfr. Part No.:
SiHH080N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK

Series

E

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Power Dissipation Pd

184W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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