Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S409ATMA2

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Subtotal (1 pack of 15 units)*

R 252,825

(exc. VAT)

R 290,745

(inc. VAT)

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Units
Per unit
Per Pack*
15 - 15R 16.855R 252.83
30 - 75R 16.433R 246.50
90 - 225R 15.94R 239.10
240 - 465R 15.303R 229.55
480 +R 14.691R 220.37

*price indicative

Packaging Options:
RS stock no.:
223-8518
Mfr. Part No.:
IPD50N06S409ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

71W

Forward Voltage Vf

0.95V

Typical Gate Charge Qg @ Vgs

17nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS series N-channel MOSFET in DPAK package has drain to source voltage of 60 V. It has benefits of highest current capability, lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.

Automotive AEC Q101 qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package

•Ultra low Rds

•100% Avalanche tested

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