Infineon OptiMOS Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD50N06S4L08ATMA2
- RS stock no.:
- 222-4666
- Mfr. Part No.:
- IPD50N06S4L08ATMA2
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 15 units)*
R 292,455
(exc. VAT)
R 336,33
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 15 unit(s) shipping from 29 December 2025
- Plus 11,625 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 19.497 | R 292.46 |
| 30 - 75 | R 19.009 | R 285.14 |
| 90 - 225 | R 18.439 | R 276.59 |
| 240 - 465 | R 17.702 | R 265.53 |
| 480 + | R 16.994 | R 254.91 |
*price indicative
- RS stock no.:
- 222-4666
- Mfr. Part No.:
- IPD50N06S4L08ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Height 2.3mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
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