Infineon IPD50R Type N-Channel MOSFET, 29 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R065C7AUMA1
- RS stock no.:
- 222-4909
- Mfr. Part No.:
- IPL60R065C7AUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 131,94
(exc. VAT)
R 151,74
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- Shipping from 09 March 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 65.97 | R 131.94 |
| 10 - 98 | R 64.32 | R 128.64 |
| 100 - 248 | R 62.39 | R 124.78 |
| 250 - 498 | R 59.895 | R 119.79 |
| 500 + | R 57.50 | R 115.00 |
*price indicative
- RS stock no.:
- 222-4909
- Mfr. Part No.:
- IPL60R065C7AUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPD50R | |
| Package Type | ThinPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 180W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPD50R | ||
Package Type ThinPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 180W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Related links
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- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 IPD60R180C7ATMA1