Infineon IPB60R Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 IPB60R090CFD7ATMA1

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Subtotal (1 pack of 2 units)*

R 193,36

(exc. VAT)

R 222,36

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 96.68R 193.36
10 - 98R 94.265R 188.53
100 - 248R 91.435R 182.87
250 - 498R 87.78R 175.56
500 +R 84.27R 168.54

*price indicative

Packaging Options:
RS stock no.:
222-4891
Mfr. Part No.:
IPB60R090CFD7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

IPB60R

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R090CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and EOSS

Best-in-class RDS(on)/package combinations

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