Vishay EF N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3
- RS stock no.:
- 204-7245
- Mfr. Part No.:
- SIHB125N60EF-GE3
- Manufacturer:
- Vishay
Image representative of range
Subtotal (1 reel of 3000 units)*
R 106 599,00
(exc. VAT)
R 122 589,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
- Shipping from 23 March 2027
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | R 35.533 | R 106,599.00 |
*price indicative
- RS stock no.:
- 204-7245
- Mfr. Part No.:
- SIHB125N60EF-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65mm | |
| Standards/Approvals | RoHS | |
| Length | 14.61mm | |
| Height | 4.06mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Width 9.65mm | ||
Standards/Approvals RoHS | ||
Length 14.61mm | ||
Height 4.06mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SIHB125N60EF-GE3
Features and Benefits:
• 25A continuous drain current supports heavy load currents
• 179W power dissipation allows sustained thermal performance
• 125mΩ Rds(on) minimises conduction losses during operation
• 31nC typical gate charge permits efficient gate-drive timing
• Vgs maximum 30V affords wide gate-drive margin for control
Applications
• Ideal for power-factor-correction stages requiring high voltage
• Used with motor-drive front-ends handling elevated voltages
• Can be used for inverter-leg switches in industrial converters
• Suitable for LED drivers needing high-voltage switching capacity
What temperature extremes can the device withstand in service?
How many electrical connections does the package provide?
Is this device suitable for automotive qualification programmes?
What mounting method is required for thermal and mechanical stability?
Related links
- Vishay SiHB125N60EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 IPB60R090CFD7ATMA1
- Infineon IPB60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SIHB Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay EF Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay SiHFBC30AS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
