Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263

RS stock no.:: 204-7245
Mfr. Part No.:: SIHB125N60EF-GE3
Manufacturer:: Vishay

Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 3000 units)*

R 108 690,00

(exc. VAT)

R 124 980,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

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Shipping from 01 December 2026

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Units	Per unit	Per Reel*
3000 +	R 36.23	R 108,690.00

*price indicative

RS stock no.:: 204-7245
Mfr. Part No.:: SIHB125N60EF-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	600V
	Series	EF
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Power Dissipation Pd	179W
	Maximum Operating Temperature	150°C
	Length	14.61mm
	Height	4.06mm
	Standards/Approvals	RoHS
	Width	9.65mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 600V
	Series EF
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Power Dissipation Pd 179W
	Maximum Operating Temperature 150°C
	Length 14.61mm
	Height 4.06mm
	Standards/Approvals RoHS
	Width 9.65mm
	Automotive Standard No

Datasheet - SIHB125N60EF-GE3

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 25A Continuous Drain Current - SIHB125N60EF-GE3

This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion roles in industrial electronics. It is intended for surface-mount use on power assemblies where robust voltage handling and elevated temperature tolerance are required, supporting applications that switch high voltages and substantial currents in automation and electrical systems.

Features and Benefits:

• 600V drain rating enables high-voltage switching capability • 25A continuous drain current supports substantial load currents • 125mΩ Rds(on) reduces conduction losses under load • 31nC typical gate charge minimises drive energy requirements • 179W power dissipation allows sustained power handling • 150°C maximum operating temperature supports high-temperature environments

Applications

• Suitable for high-voltage inverter stages in industrial drives • Ideal for power supplies requiring high breakdown voltage • Used with motor controllers handling tens of amperes • Can be used for relay replacement in solid-state switching • Used for power conversion in automation equipment

What gate voltage range is safe for switching the device?

The device accepts gate voltages up to 30V, specifying the maximum permissible gate-to-source potential for reliable operation.

How does package choice affect thermal performance?

The TO-263 package offers a large thermal pad and leads for heat conduction, aiding heat transfer to PCB copper and heatsinks to support the rated power dissipation.

What are the environmental limits for operation?

The component is specified to operate down to -55°C and up to 150°C, defining the allowable ambient and junction extremes for design margins.

How many pins are available for PCB layout considerations?

The part uses three pins, which determines footprint and connection arrangements for drain, source and gate on the PCB.