MPN

Infineon HEXFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF

RS stock no.:: 222-4745
Mfr. Part No.:: IRFH5250TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)*

R 263,84

(exc. VAT)

R 303,42

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 16,000 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 10	R 26.384	R 263.84
20 - 90	R 25.724	R 257.24
100 - 240	R 24.952	R 249.52
250 - 490	R 23.954	R 239.54
500 +	R 22.996	R 229.96

*price indicative

RS stock no.:: 222-4745
Mfr. Part No.:: IRFH5250TRPBF
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	25V
	Series	HEXFET
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.15mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	52nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3.6W
	Maximum Operating Temperature	150°C
	Height	0.9mm
	Width	4.75 mm
	Standards/Approvals	RoHS
	Length	6mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 25V
	Series HEXFET
	Package Type PQFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.15mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 52nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3.6W
	Maximum Operating Temperature 150°C
	Height 0.9mm
	Width 4.75 mm
	Standards/Approvals RoHS
	Length 6mm
	Automotive Standard No

Datasheet - IRFH5250TRPBF

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDSon (<1.15 mΩ)

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Low Profile (<0.9 mm)

Infineon HEXFET Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin PQFN IRFH5250TRPBF

FREE delivery for orders over R 1,500.00

Related links