onsemi NTMT190N Type N-Channel MOSFET, 20 A, 650 V Enhancement, 4-Pin PQFN

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Subtotal (1 reel of 3000 units)*

R 167 451,00

(exc. VAT)

R 192 570,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000R 55.817R 167,451.00
6000 - 6000R 54.421R 163,263.00
9000 +R 52.789R 158,367.00

*price indicative

RS stock no.:
221-6739
Mfr. Part No.:
NTMT190N65S3HF
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

650V

Series

NTMT190N

Package Type

PQFN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

162W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

34nC

Maximum Operating Temperature

175°C

Width

1.1 mm

Length

8.1mm

Standards/Approvals

No

Height

8.1mm

Automotive Standard

No

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 316 pF

100% avalanche tested

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